Abstract: A highly efficient power amplifier is a critical component of an RF transmitter, particularly at higher frequencies, where gain and efficiency decrease due to noise. The primary objective of ...
Abstract: The gallium-nitride (GaN) high-electron-mobility transistors (HEMT) devices have great potential for high-power, high-temperature, and high-frequency applications. However, it is challenging ...
If you’re checking your portfolio at the end of December and you’re invested in advanced nuclear, the view can look ugly. The industry, a darling of the 2025 market, is currently flashing red warnings ...
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